2011. 6. 21 1/6 semiconductor technical data kf9n25d n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converters and switching mode power supplies. features h v dss = 250v, i d = 7.5a h drain-source on resistance : r ds(on) =0.4 ? @v gs = 10v h qg(typ) = 14.5nc maximum rating (ta=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 7.5 a @t c =100 ? 4.74 pulsed (note1) i dp 25 single pulsed avalanche energy (note 2) e as 126 mj repetitive avalanche energy (note 1) e ar 4.0 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 54.3 w derate above 25 ? 0.43 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.3 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w g d s pin connection dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source
2011. 6. 21 2/6 kf9n25d revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 250 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.22 - v/ ? drain cut-off current i dss v ds =250v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =3.75a - 0.31 0.40 ? dynamic total gate charge q g v ds =200v, i d =9a v gs =10v (note4,5) - 14.5 - nc gate-source charge q gs - 3.2 - gate-drain charge q gd - 6.3 - turn-on delay time t d(on) v dd =125v i d =9a r g =25 ? (note4,5) - 15 - ns turn-on rise time t r - 25 - turn-off delay time t d(off) - 30 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 560 - pf output capacitance c oss - 96 - reverse transfer capacitance c rss - 15 - source-drain diode ratings continuous source current i s v gs |